| Code |
Course Name |
Language |
Type |
| FIZ 413E |
Solid State Electronics |
English |
Elective |
| Local Credits |
ECTS |
Theoretical |
Tutorial |
Laboratory |
| 3 |
4 |
3 |
0 |
0 |
| Course Prerequisites and Class Restriction |
| Prerequisites |
FIZ 252 MIN DD
or FIZ 252E MIN DD
or FIZ 201 MIN DD
or FIZ 201E MIN DD
or FIZ 313 MIN DD
or FIZ 313E MIN DD
|
| Class Restriction |
None |
| Course Description |
| Concept of solids, crystal and amorphous structures, crystal defects. Electrons in solids, allowed
and forbidden bands, band gap. Properties of energy bands, intrinsic semiconductors, doped
semiconductors (p- and n-type), fermi energy level. Statistics of electrons and holes. Mobility,
Hall Effect, diffusion current, generation and recombination, work function, contact potential. p-
n junction and diode. Special diodes: zener diode, tunnel diode, varactor, metal-semiconductor
contact and schottky diode, photodiode. Transistors: p-n-p and n-p-n junction transistors, field
effect transistors (FET), n-channel field effect transistors (JFET) and drain characteristics, metal
oxide semiconductor field effect transistors (MOSFET), thyristors, silicon control rectifier (SCR)
and integrated circuits. |
|
